o Physical Design Database (DEF): Contains the placed locations of all cells and the layout of the power grid
o
Parasitic Resistance (RC Extraction or SPEF):
Accurate resistance values for all segments of the PDN (metal wires and vias).
This usually comes from an RC extraction tool run on the power grid layout
(e.g., from Quantus/StarRC). Sometimes derived from LEF/tech files for early
estimates.
o
Library Power Information (.lib):
Specifies the average leakage power (or current) consumed by each standard cell
and macro.
o
Average Switching Activity: Information
about the average toggle rate or switching probability of the cells in the
design. This can be:
o
A global default activity factor (e.g., 10-20%
toggle rate) - less accurate.
o
Statistical averages derived from synthesis or
simulation.
o
Cell-based average power calculated from
libraries and potentially state probability information.
o
Power Source Locations: Coordinates and
voltage values of the main power pads/bumps/sources connected to the PDN.
o
(Optional) Technology Files/each cell current
characteristics defined: For EM limits and material properties if EM
analysis is run concurrently.
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